Gate Stack Engineering for Emerging Polarization based Non-volatile Memories

In 2011 Milan Pesic obtained B.Sc. in Electrical Engineering and Computer Science at University of Belgrade. Afterwards, in 2013 he received the M.Sc. in Nanoelectronics systems at the Faculty of Electrical Engineering of Technical University of Dresden, Germany. Since 2014, he has been pursuing a Ph.D. degree in the Nanoelectronic Materials Laboratory NaMLab gGmbH and at Technical University of Dresden, Germany. He defended his Ph.D. thesis with highest honors in May 2017. His research activities are in the field of non-volatile memories. Particularly, his interests are the oxide reliability, ferroelectrics, neuromorphics, characterization and modeling of emerging non-volatile memories as well as the energy efficient electronics (steep-slope device).