Hydride vapour phase epitaxy growth, crystal properties and dopant incorporation in gallium nitride

Patrick Hofmann studied Applied Natural Science in Freiberg from 2008 to 2013 and finished his studies in the mid of 2013. Starting from June 2013 he worked as a scientist/ PhD-student at NaMLab gGmbH, where he cooperated with Freiberger Compound Materials GmbH, to investigate GaN single crystal growth via Hydride Vapour Phase Epitaxy with a deeper focus on doping. At the end of 2017 he handed in his dissertation and defended his results successfully. The publication of his work poses the end of his graduation.